Product Summary

The FS75R12KE3-B3 is an IGBT-Module.

Parametrics

FS75R12KE3-B3 absolute maximum ratings: (1)collector emitter voltage: 1200 V; (2)DC collector current: 100 A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 350W; (5)gate emitter peak voltage: +/- 20V; (6)DC forward current: 75A; (7)repetitive peak forward current: 150 A; (8)insulation test voltage: 2.5 kV.

Features

FS75R12KE3-B3 features: (1)rated resistance: 5kΩ; (2)power dissipation: 20 mW; (3)B-value: 3375K; (4)maximum junction temperature: 150℃; (5)operation temperature: -40 to 125℃; (6)storage temperature: -40 to 125℃.

Diagrams

FS75R12KE3-B3 block diagram

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