Product Summary

The BSM100GD120DN2 is an IGBT module.

Parametrics

BSM100GD120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kΩ, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, IC: 150A when TC = 25℃; 100A when TC = 80℃; (5)Pulsed collector current, tp = 1 ms, ICpuls: 300A when TC = 25℃; 200A when TC = 80℃; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 680W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃; (9)Thermal resistance, chip case RthJC: 0.182K/W; (10)Diode thermal resistance, chip case RthJCD: 0.36K/W; (11)Insulation test voltage, t = 1min, Vis: 2500 Vac; (12)Creepage distance: 16 mm; (13)Clearance: 11mm.

Features

BSM100GD120DN2 features: (1)Solderable Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM100GD120DN2 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GD120DN2
BSM100GD120DN2
Infineon Technologies
IGBT Modules 1200V 100A FL BRIDGE
Data Sheet
0-1: $137.54
1-5: $130.67
5-10: $123.79
10-50: $120.06
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GAL120DLCK
BSM100GAL120DLCK
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
0-1: $44.53
1-10: $40.07
BSM100GAL120DN2
BSM100GAL120DN2
Infineon Technologies
IGBT Modules 1200V 100A CHOPPER
Data Sheet
Negotiable 
BSM100GAR120DN2
BSM100GAR120DN2
Infineon Technologies
IGBT Transistors 1200V 100A DUAL
Data Sheet
Negotiable 
BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
BSM100GB120DN2
BSM100GB120DN2
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $82.74
1-10: $74.47