Product Summary
The FF200R12KT4 is an IGBT module.
Parametrics
FF200R12KT4 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)DC-collector current: 200A; (3)Repetitive peak collector current: 400A; (4)total power dissipation: 1100W; (5)Gate-emitter peak voltage: ±20V.
Features
FF200R12KT4 features: (1)Collector-emitter saturation voltage: 215V; (2)gate threshold voltage: 64V; (3)Gate charge: 180μC; (4)Internal gate resistor: 38Ω; (5)Input capacitance: 140μF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R12KT4 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 320A |
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Image | Part No | Mfg | Description | Pricing (USD) |
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FF200R06KE3 |
Infineon Technologies |
IGBT Modules N-CH 600V 260A |
Data Sheet |
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FF200R06ME3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3 |
Infineon Technologies |
IGBT Modules IGBT 600V 200A |
Data Sheet |
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FF200R06YE3ENG |
Infineon Technologies |
IGBT Modules |
Data Sheet |
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FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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