Product Summary

The BSM150GB120DN2 is an IGBT Power Module.

Parametrics

BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM150GB120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM150GB120DN2
BSM150GB120DN2
Infineon Technologies
IGBT Modules 1200V 150A DUAL
Data Sheet
0-1: $96.31
1-10: $86.68
BSM150GB120DN2_E3166
BSM150GB120DN2_E3166
Infineon Technologies
IGBT Modules N-CH 1.2KV 210A
Data Sheet
0-5: $108.98
5-10: $98.08
BSM150GB120DN2F_E3256
BSM150GB120DN2F_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 150A
Data Sheet
0-6: $97.80
6-10: $88.20
BSM150GB120DN2F
BSM150GB120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 150A
Data Sheet
0-6: $88.80
6-10: $79.80
BSM150GB120DN2E3166
BSM150GB120DN2E3166
Other

Data Sheet
Negotiable