Product Summary

The BSM150GB120DN2 is an IGBT Power Module.

Parametrics

BSM150GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

BSM150GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM150GB120DN2 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GB120DN2
BSM150GB120DN2

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Data Sheet

0-1: $96.31
1-10: $86.68
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Data Sheet

0-5: $108.98
5-10: $98.08
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Data Sheet

0-6: $97.80
6-10: $88.20
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Infineon Technologies

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Data Sheet

0-6: $88.80
6-10: $79.80
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BSM150GB120DN2E3166

Other


Data Sheet

Negotiable