Product Summary

The BSM150GB120DN2F is an IGBT Power Module.

Parametrics

BSM150GB120DN2F absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 210 A at TC = 25 ℃, 150 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 420 A at TC = 25 ℃, 300 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1250 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -55 to + 150 ℃.

Features

BSM150GB120DN2F features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM150GB120DN2F block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BSM150GB120DN2F
BSM150GB120DN2F

Infineon Technologies

IGBT Modules IGBT 1200V 150A

Data Sheet

0-6: $88.80
6-10: $79.80
BSM150GB120DN2F_E3256
BSM150GB120DN2F_E3256

Infineon Technologies

IGBT Modules IGBT 1200V 150A

Data Sheet

0-6: $97.80
6-10: $88.20