(Hong Kong)
Product Summary
The QM20TD-H is a MITSUBISHI transistor module.
Parametrics
QM20TD-H absolute maximum ratings: (1)Collector-emitter voltage: 600 V; (2)Collector-emitter voltage: 600 V; (3)Collector-base voltage: 600 V; (4)Emitter-base voltage: 7 V; (5)Collector current: 20 A; (6)Collector reverse current: 20 A; (7)Collector dissipation: 100 W; (8)Base current: 1 A; (9)Surge collector reverse current (forward diode current): 200 A; (10)Junction temperature: -40 to +150 ℃; (11)Storage temperature: -40 to +150 ℃.
Features
QM20TD-H features: (1)IC Collector current: 20A; (2)VCEX Collector-emitter voltage: 600V; (3)hFE DC current gain: 75; (4)Insulated Type; (5)UL Recognized: Yellow Card No. E80276 (N), File No. E80271.
Diagrams
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QM20TD-HB |
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