Product Summary

The BSM200GA120DN2 is an IGBT power module.

Parametrics

BSM200GA120DN2 maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage RGE = 20 kW VCGR: 1200 V; (3)Gate-emitter voltage VGE ± 20 V; (4)DC collector current TC = 25 ℃: 300A; (5)TC = 80 ℃: 200A; (6)Pulsed collector current, tp = 1 ms ICpuls TC = 25 ℃: 600A; TC = 80 ℃: 400A; (7)Diode thermal resistance, chip case RthJCD ≤ 0.15; (8)Insulation test voltage, t = 1min. Vis 2500 Vac; (9)Creepage distance - 20 mm; (10)Clearance - 11; (11)DIN humidity category, DIN 40 040 - F sec; (12)IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56.

Features

BSM200GA120DN2 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM200GA120DN2 Circuit Diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM200GA120DN2
BSM200GA120DN2
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-1: $71.06
1-10: $63.95
BSM200GA120DN2C
BSM200GA120DN2C
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2F
BSM200GA120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2FS
BSM200GA120DN2FS
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2FS_E3256
BSM200GA120DN2FS_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $79.20
6-10: $71.40
BSM200GA120DN2S
BSM200GA120DN2S
Infineon Technologies
IGBT Transistors 1200V 200A SINGLE
Data Sheet
0-6: $78.50
6-10: $70.65
BSM200GA120DN2S_E3256
BSM200GA120DN2S_E3256
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $79.20
6-10: $71.40