(Hong Kong)
Product Summary
The BSM200GB120DN2 is an IGBT Power Module.
Parametrics
BSM200GB120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200 V; (2)Collector-gate voltage: 1200 V at RGE = 20 kW; (3)Gate-emitter voltage: ± 20 V; (4)DC collector current: 290 A at TC = 25 ℃, 200 A at TC = 80 ℃; (5)Pulsed collector current, tp = 1 ms: 580 A at TC = 25 ℃, 400 A at TC = 80 ℃; (6)Power dissipation per IGBT: 1400 W at TC = 25 ℃; (7)Chip temperature: + 150 ℃; (8)Storage temperature: -40 to + 125 ℃; (9)Thermal resistance, chip case: ≤ 0.09 K/W; (10)Diode thermal resistance, chip case: ≤ 0.18 K/W; (11)Insulation test voltage, t = 1min.: 2500 Vac; (12)Creepage distance : 20 mm; (13)Clearance: 11 mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56 sec.
Features
BSM200GB120DN2 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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 BSM200GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A DUAL |
Data Sheet |
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BSM200GA120D |
Other |
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Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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