Product Summary

The BSM25GD120DN2E3224 is a 3-phase full-bridge IGBT Power Module.

Parametrics

BSM25GD120DN2E3224 absolute maximum ratings: (1)Collector-emitter voltage:1200 V; (2)Collector-gate voltage RGE = 20 kΩ:1200V; (3)Gate-emitter voltage:± 20V; (4)Power dissipation per IGBT TC = 25℃:200W; (5)Chip temperature:+150℃; (6)Storage temperature:-40℃ to +125℃.

Features

BSM25GD120DN2E3224 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM25GD120DN2E3224 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM25GD120DN2E3224
BSM25GD120DN2E3224
Infineon Technologies
IGBT Modules N-CH 1.2KV 35A
Data Sheet
0-1: $47.80
1-5: $45.41
5-10: $43.01
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM200GA120D
BSM200GA120D
Other

Data Sheet
Negotiable 
BSM200GA120DLC
BSM200GA120DLC
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DLCS
BSM200GA120DLCS
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-6: $74.68
6-10: $67.21
BSM200GA120DN2
BSM200GA120DN2
Infineon Technologies
IGBT Modules 1200V 200A SINGLE
Data Sheet
0-1: $71.06
1-10: $63.95
BSM200GA120DN2C
BSM200GA120DN2C
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40
BSM200GA120DN2F
BSM200GA120DN2F
Infineon Technologies
IGBT Modules IGBT 1200V 200A
Data Sheet
0-6: $72.00
6-10: $65.40