Product Summary

The MUBW35-12E7 is an IGBT. Applications of the MUBW35-12E7 are: Input from single or three phase grid, Three phase synchronous or asynchronous motor, electric braking operation.

Parametrics

MUBW35-12E7 absolute maximum ratings: (1)IFAV TC = 80℃; sine 180°: 30 A; (2)IDAVM TC = 80℃; rectangular; d = 1/3; bridge: 80 A; (3)IFSM TVJ = 25℃; t = 10 ms; sine 50 Hz: 300 A; (4)Ptot TC = 25℃: 100 W.

Features

MUBW35-12E7 features: (1)High level of integration - only one power semiconductor module required for the whole drive; (2)Inverter with NPT IGBTs; (3)Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery; (4)Industry standard package with insulated copper base plate and soldering pins for PCB mounting; (5)Temperature sense included.

Diagrams

MUBW35-12E7 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MUBW35-12E7
MUBW35-12E7

Ixys

Discrete Semiconductor Modules 35 Amps 1200V

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MUBW100-06A8
MUBW100-06A8

Ixys

Discrete Semiconductor Modules 100 Amps 600V

Data Sheet

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Data Sheet

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MUBW10-06A6K

Ixys

Discrete Semiconductor Modules NPT IGBT 600V, 10A

Data Sheet

Negotiable 
MUBW10-06A7
MUBW10-06A7

Ixys

Discrete Semiconductor Modules 10 Amps 600V

Data Sheet

Negotiable 
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Data Sheet

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Data Sheet

Negotiable